收藏本站
DMG4712SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
Mechanical Data
?
?
?
?
?
?
?
?
?
?
?
High Density UMOS with Schottky Barrier Diode
Low Leakage Current at High Temperature
High Conversion Efficiency
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Util izes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
UIS Tested, R G Tested
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
?
?
?
?
?
?
?
S
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.072 grams (approximate)
D
D iodes Schottky I ntegrated M O S FET
Top View
Maximum Ratings @T A = 25°C unless otherwise specified
S
S
G
Top View
Internal Schematic
D
D
D
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±12
Unit
V
V
Continuous Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 85°C
I D
11.2
6.6
A
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
I DM
I AR
E AR
63
30
45
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J , T STG
Value
1.55
81.3
-55 to +150
Unit
W
°C/W
°C
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I AR and E AR rating are based on low frequency and duty cycles to keep T J = 25°C. L = 0.1mH, V DD = 0V, R G = 0 ? , rated V DS = 30V, and V GS = 10V.
DMG4712SSS
Document number: DS32040 Rev. 6 - 2
1 of 6
www.diodes.com
August 2010
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMG4800LFG-7 MOSFET N-CH 30V 7.44A 8DFN
DMG4800LK3-13 MOSFET N-CH 30V 10A TO252
DMG4800LSD-13 MOSFET 2N-CH 30V 8.54A SO8
DMG4822SSD-13 MOSFET DL N-CH 30V 10A SO-8
DMG4932LSD-13 MOSFET 2N-CH 30V 9.5A SO8
DMG5802LFX-7 MOSFET N-CH DUAL 24V DFN5020-6
DMG6602SVT-7 MOSFET N/P-CH 30V TSOT23-6
DMG6898LSD-13 MOSFET 2N-CH 20V 9.5A SO8
相关代理商/技术参数
DMG4800LFG 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4800LFG-7 功能描述:MOSFET ENHANCE MODE MOSFET 30V/4.82 - 7.44A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4800LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4800LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4800LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4800LSD-13 功能描述:MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4800LSDQ-13 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 31V-40V SO-8 T&R 2.5K - Tape and Reel
DMG4812SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE